Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy
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چکیده
منابع مشابه
Growth of AlN by metalorganic molecular beam epitaxy
Thin film AlN has been grown on Al2O3 and GaAs substrates by metalorganic molecular beam epitaxy using amine bonded alane precursors and either tertiarybutylamine or nitrogen from a compact electron cyclotron resonance �ECR� plasma source operating at 2.45 GHz. Typical growth pressures were in the 0.5–1�10�4 Torr range. The growth rates, impurity backgrounds, and surface morphologies were exami...
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ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 1999
ISSN: 1092-5783
DOI: 10.1557/s1092578300003653